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MITSUBISHI Nch POWER MOSFET
FS70VSH-03
HIGH-SPEED SWITCHING USE
FS70VSH-03
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 0.3 9.8 0.5
3.0 +0.3 -0.5
0 -0
+0.3
1 5 0.8
B
0.5
qwe wr
2.6 0.4
2.5V DRIVE VDSS .................................................................................. 30V rDS (ON) (MAX) .............................................................. 14m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ............. 70ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 30 10 70 280 70 70 280 70 -55 ~ +150 -55 ~ +150 1.2
4.5
Unit V V A A A A A W C C g
Feb.1999
L = 30H
(1.5)
MITSUBISHI Nch POWER MOSFET
FS70VSH-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 2.5V ID = 35A, VGS = 4V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 30 -- -- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.9 10 13 0.35 60 4000 800 420 50 250 350 350 1.0 -- 70 Max. -- 0.1 0.1 1.2 14 20 0.49 -- -- -- -- -- -- -- -- 1.5 1.79 --
Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 15V, ID = 35A, VGS = 4V, RGEN = RGS = 50
IS = 35A, VGS = 0V Channel to case IS = 35A, dis/dt = -50A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3
TC = 25C Single Pulse tw = 10ms 100ms
80
60
1ms 10ms DC 100ms
40
20
0
0
50
100
150
200
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 100
4V 3V VGS = 5V 2.5V
50
VGS = 5V 2.5V 2V
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
4V 3V
60
PD = 70W 2V
30
1.5V
40
1.5V
20
20
TC = 25C Pulse Test
10
TC = 25C Pulse Test
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70VSH-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20
TC = 25C Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
1.6
16
VGS = 2.5V
1.2
ID = 100A
12
4V
0.8
70A
8
0.4
30A
4
0
0
1.0
2.0
3.0
4.0
5.0
00 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
TC = 25C 75C 125C
DRAIN CURRENT ID (A)
60
40
20
FORWARD TRANSFER ADMITTANCE yfs (S)
80
0
0
1.0
2.0
3.0
4.0
5.0
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2
Tch = 25C f = 1MHZ VGS = 0V Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2
tr
SWITCHING TIME (ns)
td(off) tf
CAPACITANCE Ciss, Coss, Crss (pF)
103 7 5 3 2 102 7 5 3 2
Coss Crss
102 7 5 4 3 2
td(on) Tch = 25C VDD = 15V VGS = 4V RGEN = RGS = 50
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
101 0 10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70VSH-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
5
Tch = 25C ID = 70A VDS = 15V
4
SOURCE CURRENT IS (A)
75
3
20V 25V
50
TC = 125C 75C
2
1
25
25C
0
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 2.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10-1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)

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